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SFH 640
5.3
FEATURES * CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% * Good CTR Linearity with Forward Current * Low CTR Degradation * Very High Collector-Emitter Breakdown Voltage, BVCER=300 V * Isolation Test Voltage: 5300 VACRMS * Low Coupling Capacitance * High Common Mode Transient Immunity * Phototransistor Optocoupler 6 Pin DIP Package with Base Connection * Field Effect Stable: TRIOS+ V * VDE 0884 Available with Option 1 * Underwriters Lab File #E52744
DE
KV TRIOS(R)
PHOTOTRANSISTOR HIGH BVCER VOLTAGE OPTOCOUPLER
Dimensions in inches (mm) Pin One ID 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
DESCRIPTION The SFH 640 is an optocoupler with very high BVCER, a minimum of 300 volts. It is intended for telecommunications applications or any DC application requiring a high blocking voltage. The SFH640 is a "better than" replacement for H11D1.
*Supplies from this group can't always be guranteed due to unforseeable yield spread.
+TRIOS-TRansparent IOn Shield
Maximum Ratings (TA=25C) Emitter Reverse Voltage ...................................................................................6 V DC Forward Current ....................................................................... 60 mA Surge Forward Current (tp10 s) .................................................. 2.5 A Total Power Dissipation ............................................................... 100 mW Detector Collector-Emitter Voltage ................................................................ 300 V Collector-Base Voltage .....................................................................300 V Emitter-Base Voltage ..........................................................................7 V Collector Current ........................................................................... 50 mA Surge Collector Current (tp1 ms) ............................................... 100 mA Total Power Dissipation ............................................................... 300 mW Package Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) ...................................................... 5300 VACRMS/7500 VACPK Isolation Resistance VIO=500 V, TA=25C .........................................................................1012 VIO=500 V, TA=100C .......................................................................1011 Insulation Thickness between Emitter and Detector .................. 0.4 mm Creepage .................................................................................................7 mm Clearance .................................................................................................7 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part1 ................................................... 175 Storage Temperature Range .......................................... -55C to +150C Operating Temperature Range....................................... -55C to +100C Junction Temperature......................................................................100C Soldering Temperature (max. 10 sec., dip soldering: distance to seating plane1.5 mm) .............................................260C
5-1
Characteristics (TA=25C, unless otherwise specified)
Symbol Emitter Forward Voltage Reverse Voltage Reverse Current Capacitance Thermal Resistance Detector Voltage Collector-Emitter Emitter-Base Capacitance BVCER BVBEO CCE CCB CEB RthJA 300 7 7 8 38 250 V V pF pF pF K/W ICE=1 mA, RBE=1 M IEB=10 A VCE=10 V, f=1 MHz VCB=10 V, f=1 MHz VEB=5 V, f=1 MHz VF VR IR CO RthJA 6 0.01 25 750 10 1.1 1.5 V V A pF K/W IF=10 mA IR= 10 A VR=6 V VR=0 V, f=1 MHz Min Typ Max Unit Condition
Thermal Resistance Package Coupling Capacitance Coupling Transfer Ratio SFH 640-1 SFH 640-2 SFH 640-3 Saturation Voltage, Collector-Emitter SFH 640-1 SFH 640-2 SFH 640-3 Leakage Current, Collector-Emitter
CC IC/IF IC/IF IC/IF 40 13 63 22 100 34
0.6 80 30 125 45 200 70 0.25 0.25 0.25 1 0.4 0.4 0.4 100
pF % % % IF=10 mA, VCE=10 V IF=1 mA, VCE=10 V IF=10 mA, VCE=10 V IF=1 mA, VCE=10 V IF=10 mA, VCE=10 V IF=1 mA, VCE=10 V IF= 10 mA, IC=2 mA IF= 10 mA, IC=3.2 mA IF=10 mA, IC=5 mA VCE=200 V, RBE=1 M
VCEsat VCEsat VCEsat ICER
V V V nA
Figure 1. Switching times measurement-test circuit and waveform IF RL VCC IC
INPUT 0
tpdon
ton tpdof
td
toff
OUTPUT 0 10% 50%
tr ts
tr
10% 50% 90%
47
90%
Switching Times (Typical) IC=2 mA (to adjust by IF), RL=100 , TA=25C, VCC=10 V
Description Turn-On Time Rise Time Turn-Off Time Fall Time Symbol tON tR tOFF tF Values 5 2.5 6 5.5 Unit s s s s
SFH640
5-2
Figure 2. Current transfer ratio (typ.) VCE=10 V, TA=25C, normalized to IF=10 mA, NCTR=f(IF)
Figure 5. Output characteristics (typ.) TA=25C, ICE=f(VCE, IF)
Figure 8. Permissible loss diode IF= f(TA)
Figure 3. Diode forward voltage (typ.) VF=f(IF,TA)
Figure 6. Transistor capacitances (typ.) TA=25C, f=1 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f (VEB)
Figure 9. Permissible power dissipation PIOT=f(TA)
Figure 4. Output characteristics (typ.) TA=25C, ICE=f(VCE, IB)
Figure 7. Collector-emitter leakage current (typ.) IF=0, RBE=1 MW, ICER=f(VCE)
SFH640
5-3

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